Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

The

incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

thereby enabling high-density mounting

•

1.8V drive

•

Halogen free compliance

•

Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

V

Gate-to-Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

A

Allowable Power Dissipation

PD

1.0

W

Total Dissipation

PT

1.2

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7045-002

Packing Type : TL

Marking

Electrical Connection

87

6

5

12

3

4

TL

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

EMH8

1

4

85

0.125

0.5

2.0

0.2

EMH2308-TL-H

Dual P-Channel 20-V (D-S) MOSFET

VBKB4265

www.VBsemi.com

1

VBKB4265

-3.5

-25

001