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DN3525 Fiches technique(PDF) 1 Page - Microchip Technology |
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DN3525 Fiches technique(HTML) 1 Page - Microchip Technology |
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1 / 14 page ![]() 2018 Microchip Technology Inc. DS20005705A-page 1 DN3525 Features • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Normally-On Switches • Solid-State Relays •Converters • Constant-Current Sources • Power Supply Circuits • Telecommunication Switches General Description The DN3525 is a low-threshold Depletion-mode (normally-on) transistor that uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type See Table 3-1 for pin information. GATE SOURCE DRAIN DRAIN 3-lead SOT-89 (Top view) N-Channel Depletion-Mode Vertical DMOS FET |
Numéro de pièce similaire - DN3525 |
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