AM29BDS643D datasheet(43/46 Pages) AMD

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Am29BDS643D

PRELI M INARY

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 1.8 V V

CC, 1 million cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 1.8 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed.

4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 4 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1 million cycles.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

32 Kword

1.5

Excludes 00h programming

prior to erasure (Note 4)

4 Kword

0.3

Chip Erase Time

194

Word Programming Time

11.5

360

µs

Excludes system level

overhead (Note 5)

Accelerated Word Programming Time

210

µs

Chip Programming Time (Note 3)

144

Excludes system level

overhead (Note 5)

Accelerated Chip Programming Time

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C

Years

125

°C

Years

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