TIP36AT datasheet(1/2 Pages) ISC

No de pièce	TIP36AT

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

TIP36AT

DESCRIPTION

·

DC Current Gain-

: hFE= 25(Min)@IC = -1.5A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-25

A

ICM

Collector Current-peak

-40

A

IB

Base Current

-5

A

PC

Collector Power Dissipation@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.25

℃

/W

Numéro de pièce similaire - TIP36AT

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