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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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T353-800TP Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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T353-800TP Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 T353-800TP Phase Control Thysistors FEATURES · Full diffusion process · High frequency operation · Low forward voltage drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High power converters · Phase controlled rectifying ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage 3500 V VDRM Repetitive Peak Forward Blocking Voltage 3500 V IT(AV) Average Forward Current Half-sine wave,180°conduction, Tc=88℃ 800 A IT(RMS) RMS on-state current Tc=88℃ 1256 A ITSM Surge on-state current 10 ms, sinusoidal wave shape, 180°conduction, Tj = 125℃ 14 KA I2t I2t for fusing 10 ms, sinusoidal wave shape 980 KA2S TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~140 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth( j-c) Thermal Resistance, Junction to Case 0.023 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VTM Forward Voltage Drop ITM = 2512 A 2.05 V IDRM IRRM peak reverse and off-state leakage current VD=VDRM VR=VRRM 100 mA IGT DC gate current required to trigger VD=12V,TJ = 25 ℃ 200 mA VGT DC gate voltage required to trigger VD=12V,TJ = 25 ℃ 4.5 V tq Typical turn-off time ITM = 1000A, di/dt = 25A/µs, VR = 50V, dV/dt = 30V/µs, TJ = 125 ℃ 350 µs |
Numéro de pièce similaire - T353-800TP |
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Description similaire - T353-800TP |
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