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OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
Summary: Two tests are needed to verify the protector junctions. Maximum current values for IGKS and ID are required at the specified applied
voltage conditions.
Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the
protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, ID,
can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is
shorted during this test (see Figure 11).
Figure 10. Transistor CB and EB Verification
V
BATH
+ V
FRM
TISP
61089B
AI6XCE
0 V
K
B (G)
I
EB
I
CB
I
GKS
Figure 11. Off-State Current Verification
0 V
AI6XCF
0 V
K
B (G)
I
CB
V
(BO)
TISP
61089B
I
D(I)
I
D
A
I
D(I) is the internal SCR value of ID
I
R
Figure 12. Typical Application Circuit
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT
RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th1
Th2
Th3
Th4
Th5
SLIC
SLIC
PROTECTOR
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
TISP
3xxxF3
OR
7xxxF3
S3a
S3b
AI6XAJB
V
BATH
TISP
61089B
C1
220 nF
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