2SA1603 datasheet(1/3 Pages) ISAHAYA

No de pièce	2SA1603

Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

PDF	3 Pages

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Fabricant	ISAHAYA [Isahaya Electronics Corporation]

Site Internet	http://www.idc-com.co.jp

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1 / 3 page

DESCRIPTION

2SA1603 is a super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

.

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=-0.3V max

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

※） It shows hFE classification in below table.

〈SMALL-SIGNAL TRANSISTOR〉

2SA1603

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

VCBO

Collector to Base voltage

-50

V

VCEO

Collector to Emitter voltage

-50

V

VEBO

Emitter to Base voltage

-6

V

I O

Collector current

-100

mA

Pc

Collector dissipation

150

mW

Tj

Junction temperature

＋125

℃

Tstg

Storage temperature

-55∼＋125

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to E break down voltage

V(BR)CEO

I C=-100μA ,R BE=∞

-50

-

V

Collector cut off current

ICBO

V CB=-50V, I E=0mA

-

-0.5

μA

Emitter cut off current

IEBO

V EB=-4V, I C=0mA

-

-0.5

μA

DC forward current gain

hFE

V CE=-6V, I C=-1mA ※

120

-

820

DC forward current gain

hFE

V CE=-6V, I C=-0.1mA

70

-

C to E Saturation Vlotage

VCE(sat)

I C=-30mA ,IB=-1.5mA

-

-0.3

V

Gain bandwidth product

fT

V CE=-6V, I E=10mA

-

200

-

MHz

Collector output capacitance

Cob

V CB=-6V, I E=0,f=1MHz

-

2.5

-

pF

JEITA：SC-70

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

0.425

1.25

0.425

2.1

①

②

③

ISAHAYA ELECTRONICS CORPORATION

Item

Ｑ

Ｒ

Ｓ

Ｔ

ｈＦＥ Item

120270

180390

270560

390820

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