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KMM5364103CK Fiches technique(PDF) 7 Page - Samsung semiconductor |
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KMM5364103CK Fiches technique(HTML) 7 Page - Samsung semiconductor |
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7 / 17 page ![]() DRAM MODULE KMM5364103CK/CKG KMM5364003CK/CKG NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only or CAS-before- RAS refresh cycles before proper device operation is achieved. VIH(min) and V IL(max) are reference levels for measuring timing of input signals. Transition times are measured between V IH(min) and V IL(max) and are assumed to be 5ns for all inputs. Measured with a load equivalent to 2 TTL loads and 100pF. Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. Assumes that tRCD ≥tRCD(max). This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. tWCS is non-restrictive operating parameter. It is included in the data sheet as electrical characteristic s only. If tWCS ≥tWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. Either tRCH or tRRH must be satisfied for a read cycle. These parameter are referenced to the CAS leading edge in early write cycles. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as reference point only. If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA. In order to hold the address latched by the first CAS going low, the parameter tCLCH must be met. 1. 2. 3. 4. 5. 6. 7. 8. Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, Output loading CL=100pF Parameter Symbol -5 -6 Unit Note Min Max Min Max Access time from CAS precharge tCPA 30 35 ns 3 Fast page mode cycle time tPC 35 40 ns CAS precharge time(Fast page cycle) tCP 10 10 ns RAS pulse width(Fast page cycle) tRASP 50 200K 60 200K ns W to RAS precharge time(C-B-R refresh) tWRP 10 10 ns W to RAS hold time(C-B-R refresh) tWRH 10 10 ns Hold time CAS low to CAS high tCLCH 5 5 ns 11 AC CHARACTERISTICS (0 °C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.) 9. 10. 11. |
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