WNB111C5APTS datasheet(3/7 Pages) WEEN

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WNB111C5APTS

6. Characteristics

Notes:

(1) * mean that parameter are 100% test at T

amb = 25°C

(2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly

assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this

data sheet, similar to the assembled devices such

as BYC15-600P.

Table 4.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IF = 5A; Tj = 25 °C

2.3

IF = 15 A; Tj = 25 °C

2.7

3.2

forward voltage

IF = 15 A; Tj = 150 °C

1.4

VR = 600 V; Tj = 25 °C

µA

reverse current

VR = 600 V; Tj = 150 °C

Dynamic characteristics

IF = 1 A; VR = 30 V; dIF/dt = 200 A/

µs; Tj = 25 °C

IF = 15 A; VR = 400 V; dIF/dt = 500 A/

µs; Tj = 25 °C

trr

reverse recovery time

IF = 15 A; VR = 200 V; dIF/dt = 200A/

µs; Tj = 25 °C

WeEn Semiconductors

WNB111C5APTS

All information provided in this document is subject to legal disclaimers.

Product data sheet

29 October 2017

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