MBD101 MMBD101LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL CHARACTERISTICS

(TA = 25°C unless noted)

Figure 1. Reverse Leakage

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Noise Figure

PLO, LOCAL OSCILLATOR POWER (mW)

0.1

0.2

0.5

2.0

1.0

10

11

3.0

0

1.0

2.0

3.0

4.0

1.0

0.9

0.8

0.7

0.6

0.3

0.4

100

0.1

30

40

50

60

70

80

100

0.1

130

110

120

90

0.07

0.05

0.02

1.0

2.0

0.5

0.6

0.7

0.01

1.0

0.7

0.5

10

1.0

Figure 5. Noise Figure Test Circuit

UHF

NOISE SOURCE

H.P. 349A

DIODE IN

TUNED

MOUNT

LOCAL

OSCILLATOR

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

NOISE

FIGURE METER

H.P. 342A

NOTES ON TESTING AND SPECIFICATIONS

Note 1 — CC and CT are measured using a capacitance bridge

(Boonton Electronics Model 75A or equivalent).

Note 2 — Noise figure measured with diode under test in tuned

diode mount using UHF noise source and local

oscillator (LO) frequency of 1.0 GHz. The LO power

is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f =

30 MHz, see Figure 5.

Note 3 — LS is measured on a package having a short instead

of a die, using an impedance bridge (Boonton Radio

Model 250A RX Meter).

0.2

VR = 3.0 Vdc

5.0

4.0

7.0

6.0

9.0

8.0

10

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(TEST CIRCUIT IN FIGURE 5)

5.0

TA = 25°C

TA = –40°C

TA = 85°C