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RFASWB643ATF06 Fiches technique(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION

No de pièce RFASWB643ATF06
Description  Any 2G/3G/4G Band for TRx System
PDF  8 Pages
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Fabricant  WALSIN [WALSIN TECHNOLOGY CORPORATION]
Site Internet  http://www.passivecomponent.com/
Logo WALSIN - WALSIN TECHNOLOGY CORPORATION

RFASWB643ATF06 Fiches technique(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION

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Approval Sheet
Page 2 of 8
ASC_RFASWB643ATF06_V05
Oct. 2017
FEATURES
Low Insertion Loss
：0.45dB typ. @ 2.7GHz
High Isolation
：27dB typ. @ 2.7GHz
Low control voltage
：1.8 to 4.2 V ：
Miniature footprint
：2.0 x 2.0 x 0.55 mm3
Moisture Sensitive Level 3 (MSL3)
：
Description
The RFASWB643ATF06 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch in a low cost miniature
QFN (2.0x2.0 x0.55mm3) package. Typical applications are for SV-LTE ,LTE-A and diversity antenna switching.
The RFASWB643ATF06 is ideally suited for applications where high power, high linearity, low insertion loss, and small size
are required.
The RFASWB643ATF06 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors
are required for all RF ports unless DC is biased externally.
Application
2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA2000, EDGE, GSM, TDD-LTE, TD-SCDMA)
Block Diagram and Pin Out (Top View)
Pin Names and Descriptions
Pin
Name
Description
Pin
Name
Description
1
VDD
DC power supply
7
RF1
RF path 1
2
N/C
No connected
8
N/C
No connected
3
VC1
Control voltage 1
9
RF4
RF path 4
4
GND
Ground
10
GND
Ground
5
RF2
RF path 2
11
path3
RF path 3
6
GND
Ground
12
GND
Ground



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