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2SA1381 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1381 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1381 DESCRIPTION · High voltage · Low reverse transfer capacitance · Excellent gain linearity for low THD · High frequency · Complement to 2SC3503 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio voltage amplifier and current source · CRT display ,video output · General purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -100 mA PC Collector Power Dissipation @ Ta=25℃ 0.7 W Total Power Dissipation @ TC=25℃ 7 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Numéro de pièce similaire - 2SA1381 |
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Description similaire - 2SA1381 |
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