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2N3906S Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2N3906S
Description  isc Silicon PNP Power Transistor
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3906S Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N3906S Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N3906S Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N3906S Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2N3906S
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-10mA, IE=0
-40
V
V(BR)CEO
Collector-emitter breakdown voltage
IC= -1mA , IB=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
IE= -10mA, IC=0
-5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -10mA; IB= -1mA
-0.25
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -50mA; IB= -5mA
-0.4
V
VBE(sat)1
base-emitter saturation voltage
IC= -10mA; IB=-1mA
-0.85
V
VCE(sat)2
Collector-Emitter Saturation Voltage
IC= -50mA; IB= -5mA
-0.95
V
ICBO
collector cut-off current
VCB = -40 V,IE = 0
-0.1
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.1
μ
A
hFE-1
DC Current Gain
IC= -0.1 mA ; VCE= -1V
60
hFE-2
DC Current Gain
IC=- 1 mA ; VCE=-1V
80
hFE-3
DC Current Gain
IC= -10 mA ; VCE=-1V
100
300
hFE-4
DC Current Gain
IC= -50 mA ; VCE=-1V
60
hFE-5
DC Current Gain
IC=-100 mA ; VCE=-1V
30
Cob
Output Capacitance
VCB=-5.0Vdc, f=1.0MHz, IE=0
4.5
pF
NF
Noise Figure
VCE=-5.0V, f=1.0kHz, IC=100uA,
RS=1.0K
4.0
dB



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