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2SA1358-Z Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SA1358-Z
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1358-Z Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SA1358-Z
DESCRIPTION
·
With TO-252(DPAK) packaging
·
Excellent linearity of hFE
·
Low collector-to-emitter saturation voltage
·
Fast switching speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
-0.1
A
PC
Collector Power Dissipation
@ TC=25℃
10
W
Collector Power Dissipation
@ Ta=25℃
1.5
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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