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2SA968 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA968 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA968 A B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 2SA968 -160 V 2SA968A -180 2SA968B -200 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -160V ; IE= 0 2SA968 -1.0 μ A VCB= -180V ; IE= 0 2SA968A VCB= -200V ; IE= 0 2SA968B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 μ A hFE DC Current Gain IC= -0.1A ; VCE= -5V 70 240 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 30 pF fT Current-Gain—Bandwidth Product IC= -0.1A;VCE= -10V 100 MHz hFE Classifications O Y 70-140 120-240 |
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