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BDX87C Fiches technique(PDF) 1 Page - STMicroelectronics |
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BDX87C Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types is the BDX88C. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX87C PNP BDX88C VCBO Collector-base Voltage (IE = 0) 100 V VCEO Collector-emitter Voltage (IB = 0) 100 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 12 A ICM Collector Peak Current (repetitive) 18 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC 120 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC 1 2 TO-3 R1 Typ. = 6 K Ω R2 Typ. = 55 Ω 1/4 |
Numéro de pièce similaire - BDX87C |
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Description similaire - BDX87C |
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