IXFN100N50P_V01 datasheet(1/6 Pages) IXYS

No de pièce	IXFN100N50P

Description	Power MOSFET

PDF	6 Pages

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

90

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

250

A

I

A

T

C = 25C

100

A

E

AS

T

C = 25C5

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

20

V/ns

P

D

T

C = 25C

1040

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

V

ISOL

50/60 Hz, RMS, t = 1minute

2500

V~

I

ISOL 1mA,

t = 1s

3000

V~

M

d

Mounting Torque for Base Plate

1.5/13

Nm/lb.in

Terminal Connection Torque

1.3/11.5

Nm/Ib.in

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

200 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

2 mA

R

DS(on)

V

GS = 10V, ID = 50A, Note 1

49 m



PolarTM HiperFETTM

Power MOSFET

IXFN100N50P

V

DSS

=

500V

I

D25

=

90A

R

DS(on) 



49m



t

rr



200ns

DS99497F(8/17)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Features



International Standard Package



Low Intrinsic Gate Resistance



miniBLOC with Aluminum Nitride

Isolation



Low Package Inductance



Fast Intrinsic Rectifier



Low R

DS(on) and QG

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



DC-DC Converters



Battery Chargers



Switch-Mode and Resonant-Mode

Power Supplies



AC Motor Control



High Speed Power Switching

Appliccation

miniBLOC

E153432

G

D

S

G = Gate

D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

S

D

G

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