IXFL100N50P datasheet(1/6 Pages) IXYS

No de pièce	IXFL100N50P

Description	Power MOSFET

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

68

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

250

A

I

A

T

C = 25C

100

A

E

AS

T

C = 25C5

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

20

V/ns

P

D

T

C = 25C

625

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

40..120 / 9..27

N/lb.

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL  1 mA

t = 1 s

3000

V~

Weight

8g

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

200 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

2 mA

R

DS(on)

V

GS = 10V, ID = 50A, Note 1

52 m



IXFL100N50P

V

DSS

=

500V

I

D25

=

68A

R

DS(on) 



52m



t

rr



200ns

DS99563F(8/17)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Features

 Silicon Chip on Direct-Copper-Bond

Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier



Low R

DS(on) and QG

Advantages

 Easy to Mount

 Space Savings

AApplications



DC-DC Converters



Battery Chargers



Switch-Mode and Resonant-Mode

Power Supplies



AC Motor Control



High Speed Power Switching

Appliccation

PolarTM HiPerFETTM

Power MOSFET

(Electrically Isolated Tab)

ISOPLUS264

G = Gate

D

= Drain

S = Source

G

D

S

Isolated Tab

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