STPS2150RL datasheet(3/6 Pages) STMICROELECTRONICS

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STPS2150

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Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values) (SMA)

Figure 6: Non repetitive surge peak forward

current versus overload duration (maximum

values) (DO-15)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration

(epoxy

printed

circuit

board,

e(Cu)=35µm, recommended pad layout) (SMA)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration (DO-15)

Figure 9: Reverse leakage current versus

reverse voltage applied (typical values)

Figure

10:

Junction

capacitance

versus

reverse voltage applied (typical values)

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

V (V)

C(nF)

100

1000

100

1000

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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