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IPS040N03L Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPS040N03L Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IPS040N03L · FEATURES · With TO-251(IPAK) packaging · High speed switching · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · DC-DC converters · Motor control · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous @Tc=25℃ Tc=100℃ 90 76 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation 79 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.9 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 50 ℃ /W |
Numéro de pièce similaire - IPS040N03L |
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Description similaire - IPS040N03L |
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