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HM3N30PR Fiches technique(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No de pièce HM3N30PR
Description  Silicon N-Channel Power MOSFET
PDF  10 Pages
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Fabricant  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Site Internet  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM3N30PR Fiches technique(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Source-Drain Diode Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current (Body Diode)
--
--
3
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
12
A
VSD
Diode Forward Voltage
IS=3A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
--
60
--
ns
Qrr
Reverse Recovery Charge
IS=3A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
--
139
--
nC
Pulse width tp≤380µs,δ≤2%
Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
50
℃
/W
RθJA
Junction-to-Ambient
62.5
℃
/W
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10.0mH, ID=3.2A, Start TJ=25℃
a3：ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
Silicon N-Channel Power MOSFET
HM3N30PR
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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