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M670KGKT Fiches technique(PDF) 3 Page - HK TO-GRACE TECHNOLOGY CO.,LTD. |
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M670KGKT Fiches technique(HTML) 3 Page - HK TO-GRACE TECHNOLOGY CO.,LTD. |
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3 / 11 page ![]() LITE-ON TECHNOLOGY CORPORATION P r o p e r t y o f L i t e - O n O n l y Electrical / Optical Characteristics at Ta=25℃ ℃ ℃ ℃ Parameter Symbol Part No. LTST- Min. Typ. Max. Unit Test Condition Luminous Intensity IV M670KGKT 56 180 mcd IF = 20mA Note 1 Viewing Angle 2 θ1/2 M670KGKT 120 deg Note 2 (Fig.5) Peak Emission Wavelength λP M670KGKT 574 nm Measurement @Peak (Fig.1) Dominant Wavelength λd M670KGKT 571 nm Note 3 Spectral Line Half-Width ∆λ M670KGKT 15 nm Forward Voltage VF M670KGKT 2.0 2.4 V IF = 20mA Reverse Current IR M670KGKT 10 μA VR = 5V Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the CIE eye-response curve. 2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 3. The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. Part No. : LTST-M670KGKT Page : 3 of 11 BNS-OD-C131/A4 |
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