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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DAM30P30H Fiches technique(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM30P30H Fiches technique(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  P-Channel Enhancement Mode MOSFET Features VDSS = -30V RDS(ON) Typ.13mΩ @ VGS = -10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications MB / VGA / Vcore Load Switch LED Application Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID -30 A @ Tc = 100°C -19 Drain Current Pulsed@ TC = 25°C IDM -120 A Maximum Power Dissipation PD 23 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case R θJc 5.4 °C/W Jun.2018 DAM30P30H Note2 |
Numéro de pièce similaire - DAM30P30H |
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Description similaire - DAM30P30H |
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