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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DAM35P30D Fiches technique(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM35P30D Fiches technique(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  P-Channel Enhancement Mode MOSFET Features VDSS = -30V RDS(ON) Typ.16.5mΩ @ VGS = -10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID -35 A @ Tc = 100°C -22 Drain Current Pulsed@ TC = 25°C IDM -140 A Maximum Power Dissipation PD 40 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 3.1 °C/W Aug.2017 DAM35P30D Thermal Resistance Junction to ambient RθJA 62 °C/W |
Numéro de pièce similaire - DAM35P30D |
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Description similaire - DAM35P30D |
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