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DAM85N60G Fiches technique(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM85N60G Fiches technique(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page ![]() N-Channel Enhancement Mode MOSFET Features VDSS = 60V RDS(ON) Typ.4.6mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 60 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ TC = 25°C ID 85 A @ TC = 100°C 53.8 Drain Current Pulsed@ TC = 25°C IDM 340 A Single Pulse Avalanche Energy EAS 181 mJ Single Pulse Avalanche Current IAS 60.1 A Maximum Power Dissipation PD 135 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case R θJC 0.92 °C/W Mar.2018 DAM85N60G Note3 |
Numéro de pièce similaire - DAM85N60G |
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