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EM5301F Fiches technique(PDF) 11 Page - Excelliance MOS Corp. |
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EM5301F Fiches technique(HTML) 11 Page - Excelliance MOS Corp. |
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11 / 12 page ![]() 2013/5/2 Rev.A.1 11 EM5301F/G Power MOSFET Selection The EM5301F/G requires two N-Channel power MOSFETs. These should be selected based upon on-resistance, breakdown voltage, gate supply requirement, and thermal management requirements. In high current applications, the MOSFET power dissipation, package selection and heat sink are the dominate design factor. The power dissipation includes two loss components: conduction loss and switching loss. The conduction losses are the largest component of power dissipation for both the upper and lower MOSFETs. These losses are distributed between the two MOSFETs according to duty factor. The power dissipations in the two MOSFETs are approximately the following equation: SW SW IN OUT DS(ON) OUT 2 UPPER t F V I D * R * I PD * * * * 5 . 0 + = D) - (1 * R * I PD DS(ON) OUT 2 LOWER = Where D is the duty cycle, tSW is the combined switch ON and OFF time. |
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