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PRM4R9N10CTF Fiches technique(PDF) 2 Page - PFC Device Inc. |
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PRM4R9N10CTF Fiches technique(HTML) 2 Page - PFC Device Inc. |
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2 / 8 page ![]() Characteristics Version 4.1 2 / 8 www.pfc-device.com PRM4R9N10CTF 1. Characteristics Maximum Ratings Characteristics ( TA = 25 oC unless otherwise specified ) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) 60 A Drain Current – Continuous (TC=100 ℃) 37.9 A IDM Drain Current – Pulsed 1 240 A EAS Single Pulse Avalanche Energy 2 245 mJ IAS Single Pulse Avalanche Current 2 35 A PD Power Dissipation (TC=25 ℃) 35.7 W Power Dissipation – Derate above 25 ℃ 0.28 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 3.5 ℃/W |
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