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IRLML6302 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRLML6302 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc P-Channel MOSFET Transistor IRLML6302 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=-0.25mA -20 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=-0.25mA -0.7 -1.5 V RDS(on) Drain-Source On-Resistance VGS= -4.5V; ID=-0.61A 600 mΩ IGSS Gate-Source Leakage Current VGS= ±12V;VDS=0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=-16V; VGS= 0V;Tj=25℃ VDS=-16V; VGS= 0V;Tj=150℃ -1 -25 μ A VSDF Diode forward voltage ISD=-0.61A, VGS = 0V -1.2 V |
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