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FS8601HD Fiches technique(PDF) 5 Page - Fortune Semiconductor Corp. |
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FS8601HD Fiches technique(HTML) 5 Page - Fortune Semiconductor Corp. |
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5 / 15 page ![]() FS8601Hx 7. Functional Block Diagram 8. Typical Application Circuit Symbol Purpose Recommended Remakes R1 ESD protection. For power fluctuation. 100~470Ω Resistance should be as small as possible to avoid lowering of the overcharge detection accuracy caused by VDD pin current. Use 470Ω for better ESD protection. C1 For power fluctuation. 0.1μF R2 Protection for reverse connection of a charger. 1k~2kΩ Select a resistance as large as possible to prevent large current when a charge is connected in reverse. Rev. 1.3 5/15 |
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