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BCR8CS Fiches technique(PDF) 4 Page - Mitsubishi Electric Semiconductor

No de pièce BCR8CS
Description  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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Fabricant  MITSUBISHI [Mitsubishi Electric Semiconductor]
Site Internet  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR8CS Fiches technique(HTML) 4 Page - Mitsubishi Electric Semiconductor

  BCR8CS Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR8CS Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR8CS Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR8CS Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR8CS Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
101
103
7
5
3
2
102
7
5
3
2
4
4
–60
–20
20
60
100
140
–40
0
40
80
120
TYPICAL EXAMPLE
160
100
80
40
20
0
140
40
–40
–60
–20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
103
105
7
5
3
2
104
7
5
3
2
7
5
3
2
102
–60
–20
20
60
100
140
–40
0
40
80
120
TYPICAL EXAMPLE
160
120
100
60
20
0
3.2
1.6
0.4
0
0.8 1.2
2.0 2.4 2.8
40
80
140
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
LACHING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
101
–40
160
103
7
5
3
2
102
7
5
3
2
7
5
3
2
100
0
40
80
120
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T2
+, G+
T2
– , G–
T2
+, G–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
20
160
120
100
60
0
16
8
2
0
4
6
10
12
14
40
80
140
60 60 t2.3
120 120 t2.3
100 100 t2.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALL FINS ARE COPPER
AND ALUMINUM
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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