2SD1695 datasheet(2/4 Pages) NEC

No de pièce	2SD1695

Description	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	NEC [NEC]

Site Internet	http://www.nec.com/

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2 / 4 page

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2SD1695

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Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to base voltage

VCBO

IC = 1.0 mA, IE = 0

273135

Collector to emitter voltage

VCEO

IC = 10 mA, RBE =

∞

Collector cutoff current

ICBO

VCB = 20 V, IE = 0

µA

DC current gain

hFE1*VCE = 2.0 V, IC = 0.5 A

1,000

DC current gain

hFE2*VCE = 2.0 V, IC = 1.0 A

2,000

30,000

Collector saturation voltage

VCE(sat)*IC = 1.0 A, IB = 1.0 mA

0.9

1.2

Base saturation voltage

VBE(sat)*IC = 1.0 A, IB = 1.0 mA

1.6

2.0

Turn-on time

ton

0.5

µs

Storage time

tstg

3.0

µs

Fall time

IC = 1.0 A, IB1 =

−IB2 = 5.0 mA

RL = 20

Ω, VCC ≅ 20 V

1.0

µs

3XOVH WHVW3: ≤

µV GXW\F\FOH ≤

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Marking

hFE2

2,000 to 5,000

4,000 to 10,000

8,000 to 30,000

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