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ZXTN2011G Fiches technique(PDF) 2 Page - Zetex Semiconductors |
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ZXTN2011G Fiches technique(HTML) 2 Page - Zetex Semiconductors |
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2 / 6 page ![]() ZXTN2011G SEMICO NDUC TORS ISSUE 1 - JUNE 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R JA 42 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO 200 V Collector-emitter voltage BVCEO 100 V Emitter-base voltage BVEBO 7V Continuous collector current (a) IC 6 A Peak pulse current ICM 10 A Power dissipation at TA =25°C (a) Linear derating factor PD 3.0 24 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.6 12.8 W mW/°C Operating and storage temperature range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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