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IXFN64N50P Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IXFN64N50P
Description  PolarHVTM HiPerFETPower MOSFET
PDF  2 Pages
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN64N50P Fiches technique(HTML) 2 Page - IXYS Corporation

  IXFN64N50P Datasheet HTML 1Page - IXYS Corporation IXFN64N50P Datasheet HTML 2Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN64N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D = 0.5 ID25, pulse test
40
60
S
C
iss
7000
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
800
pF
C
rss
100
pF
t
d(on)
30
n s
t
r
V
GS
= 10 V, V
DS = 0.5 ID25
25
n s
t
d(off)
R
G
= 2
Ω (External)
85
n s
t
f
22
n s
Q
g(on)
200
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 VDSS, ID = 0.5 ID25
45
nC
Q
gd
120
nC
R
thJC
0.18 K/W
R
thCK
SOT-227B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS = 0 V
64
A
I
SM
Repetitive
150
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F = 25A, -di/dt = 100 A/µs
250
ns
Q
RM
V
R = 100V
0.6
µC
SOT-227B Outline



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