ISCN22 datasheet(1/1 Pages) ISC

No de pièce	ISCN22

Description	isc NPN Power Transistor Die

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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isc NPN Power Transistor Die

ISCN22

CHARACTERISTICS

Die Size

300um*300um

Thickness

165±15um

Metal

Solder joint layer

AL:2.8±0.3um

Backside layer

Au ≥1.2um

Bonding Area

Emitter

100um*100um

Base

100um*100um

Scribe Line Size

50um

Wafer Size

φ

125mm

Estimated Gross Die

114000

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base voltage

6

V

IC

Collector Current-Continuous

200

mA

PC

Collector Power Dissipation@ TC=25℃

200

mW

TJ

Junction Temperature

150

℃

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10µA; IB= 0

60

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

40

V

V(BR)EBO

Emitter-Base Breakdown voltage

IE= 10µA; IC= 0

6

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 50mA; IB= 5mA

0.3

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 50mA; IB= 5mA

0.95

V

ICBO

Collector Cutoff Current

VCB= 30V; IE=0

100

nA

IEBO

Emitter Cutoff Current

VEB= 3V; IC=0

100

nA

hFE

DC Current Gain

IC= 10mA; VCE= 1V

100

300

hFE

DC Current Gain

IC= 0.1mA; VCE= 1V

40

hFE

DC Current Gain

IC= 100mA; VCE= 1V

30

fT

Gain Bandwidth Product

VCE=20V,IC=10mA,f=100MHz

250

MHz

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