AP6503A

Document number: DS36000 Rev. 4 - 2

3 of 15

www.diodes.com

March 2017

© Diodes Incorporated

AP6503A

Functional Block Diagram

E

+

-

+

-

+

-

+

-

+

-

+

1.1V

0.3 V

INTERNAL

REGULATORS

Logic

5V

SHUTDOWN

COMPARATOR

0.9V

+

-

ERROR

AMPLIFIER

LOCKOUT

COMPARATOR

8

7

5

80/240kHz

OSCILLATOR

CURRENT

SENSE

AMPLIFIER

OVP

RAMP

CLK

CURRENT

COMPARATOR

EN OK

disable

IN < 4.10V

2

1

4

6

FB

6μA

EN

COMP

2.5V

SS

0.923 V

GND

SW

BST

IN

100m

Ω

100m

Ω

IN

UVP

HS

LS

3

Figure 3. Functional Block Diagram

Symbol

Parameter

Rating

Unit

Supply Voltage

-0.3 to +26

V

Switch Node Voltage

V

Bootstrap Voltage

V

Feedback Voltage

-0.3V to +6

V

Enable/UVLO Voltage

-0.3V to +6

V

Comp Voltage

-0.3V to +6

V

Storage Temperature

-65 to +150

°C

Junction Temperature

+150

°C

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

3

kV

MM

Machine Model

250

V

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability

may be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.