2PC4617M datasheet(3/6 Pages) PHILIPS

3 / 6 page

2003 Jul 15

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

2PC4617M series

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60

µm copper strip line.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

note 1

500

K/W

note 2

290

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 30 V; IE =0

−

100

VCB = 30 V; IE = 0; Tj = 150 °C

−

µA

IEBO

emitter-base cut-off current

VEB =4V; IC =0

−

100

hFE

DC current gain

VCE =6V; IC =1mA

2PC4617QM

120

270

2PC4617RM

180

390

2PC4617SM

270

560

VCEsat

collector-emitter saturation voltage

IC = 50 mA; IB = 5 mA; note 1

−

200

collector capacitance

IE =ie = 0; VCB = 12 V; f = 1 MHz

−

1.5

transition frequency

VCE = 12 V; IC = 2 mA;

f = 100 MHz

100

−

MHz

2PC4617M Fiches technique(PDF) 3 Page - NXP Semiconductors

2PC4617M Fiches technique(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL