IXGQ90N33TCD1 IXGA90N33TC

IXGQ90N33TC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fS

I

40

65

S

C

ies

2320

pF

C

oes

V

180

pF

C

res

21

pF

Q

g

69

nC

Q

ge

I

15

nC

Q

gc

13

nC

t

d(on)

13

ns

t

r

30

ns

t

d(off)

38

ns

t

f

49

ns

t

d(on)

13

ns

t

r

28

ns

t

d(off)

50

ns

t

f

74

ns

R

thJC

0.62 °C/W

R

thCS

TO-3P

0.21

°C/W

Resistive Switching Times, T

I

V

Resistive Switching Times, T

I

V

Reverse Diode

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

V

F

I

2.0

V

R

thJC

2.5 °C/W

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

TO-263 Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

TO-3P Outline

1 = Gate

2,4

= Collector

3 = Emitter

Note:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.