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TC4069G-S14-R Fiches technique(PDF) 3 Page - Unisonic Technologies |
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TC4069G-S14-R Fiches technique(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() TC4069 CMOS IC UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R502-635.B ABSOLU T E M AX I M U M RAT I N GS (N ot e 2 , 3 ) PARAMETER SYMBOL RATINGS UNIT DC Supply Voltage VDD -0.5 ~ +20 V Input Voltage VIN -0.5 ~ VDD +0.5 V Storage Temperature TS -65 ~ +150 °C DIP-14 300 SOP-14 180 Power Dissipation TSSOP-14 PD mW Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -65 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. AC Parameters are guaranteed by DC correlated testing. 3. IOH and IOL are tested one output at a time. RECOM M EN DED OPERAT I N G CON DI T I ON S (VSS=0V ) PARAMETER SYMBOL RATINGS UNIT DC Supply Voltage VDD 3 ~ 18 V Input Voltage VIN 0 ~ VDD V Operating Temperature TA -40 ~ 85 °C DC ELECT RI CAL CH ARACT ERI ST I CS (N ot e 2 ) (TA=25°C, unless otherwise specified) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT VDD=5V, VIN=VDD or VSS 0.25 VDD=10V, VIN=VDD or VSS 0.5 Quiescent Device Current IDD VDD=15V, VIN=VDD or VSS 1 μA VDD=5V 0 0.05 VDD=10V 0 0.05 Low VOL |IO|<1 μA VDD=15V 0 0.05 V VDD=5V 4.95 5 VDD=10V 9.95 10 Output Voltage High VOH |IO|<1 μA VDD=15V 14.95 15 V VDD=5V, VO=4.5V 1.0 VDD=10V, VO=9V 2.0 Low VIL |IO|<1 μA VDD=15V,VO=13.5V 3.0 V VDD=5V, VO=0.5V 4.0 VDD=10V, VO=1V 8.0 Input Voltage High VIH |IO|<1 μA VDD=15V, VO=1.5V 12.0 V VDD=5V, VO=0.4V 0.51 1.2 VDD=10V, VO=0.5V 1.3 3.2 Low IOL VDD=15V, VO=1.5V 3.4 12 mA VDD=5V, VO=4.6V -0.51 -1 VDD=5V, VO=2.5V -2.1 -4 VDD=10V, VO=9.5V -1.3 -2.2 Output Current (Note 3) High IOH VDD=15V, VO=13.5V -3.4 -9 mA VDD=15V, VIN=0V -10 -5 -0.1 Input Current IIN VDD=15V, VIN=15V 10 -5 0.1 μA |
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