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MBRB10200 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRB10200 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRB10200 FEATURES · With TO-263(D2PAK) packaging · Low leakage current, low power loss, high efficiency · High frequency operation · High surge capability · Low stored charge majority carrier conduction · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · High frequency inverters · Freewheeling diodes · Reverse battery protection · Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 200 140 200 V IF(AV) Average Rectified Forward Current@Tc=125℃ 10 A IFSM Nonrepetitive Peak Surge Current (8.3ms single half sine-wave superimposed on rated load conditions) 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Numéro de pièce similaire - MBRB10200 |
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Description similaire - MBRB10200 |
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