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FDP053N08B Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDP053N08B Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FDP053N08B · FEATURES · With TO-220 packaging · High speed switching · Very high commutation ruggedness · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operationz · APPLICATIONS · PFC stages · LCD & PDP TV · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous@Tc=25℃ Tc=100℃ 120 82.5 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation 146 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.03 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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