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BLD137DL Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BLD137DL
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BLD137DL Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
BLD137DL
DESCRIPTION
·
With TO-220 packaging
·
Reliable performance at higher powers
·
Accurate reproduction of Input signal
·
Greater dynamic range
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching regulators
·
High frequency inverters
·
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
PT
Total Power Dissipation
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.63
℃
/W


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