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3DD101C Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3DD101C Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 3DD101C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 200 V BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 250 V BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 4 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.5 V ICEO Collector Cutoff Current VCE= 50V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 2.0 mA hFE DC Current Gain IC= 2A; VCE= 5V 20 |
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