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T9G0161203DH Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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T9G0161203DH Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 T9G0161203DH Phase Control Thyristors FEATURES · Low on-state voltage · High dV/dt capability · Guaranteed Maximum Turn-Off Time · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power supplies · Motor control · Light dimmers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage 1600 V IT(AV) Average Forward Current Sinewave,180ο conduction,Tc=65℃ 1200 A IT(RMS) Maximum RMS on-state current 1880 A ITSM Max. peak, one-cycle forward, non-repetitive surge current 8.3 msec (60Hz), sinusoidal wave shape, 180οconduction, Tj = 125℃ 28500 A 10 msec (50Hz), sinusoidal wave shape, 180οconduction, Tj = 125℃ 26000 PG(AV) Average gate power dissipation 5 W TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.025 ℃ /W |
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