PIMZ2 datasheet(4/9 Pages) PHILIPS

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9397 750 13966

Product data sheet

Rev. 05 — 24 November 2004

4 of 9

Philips Semiconductors

PIMZ2; PUMZ2

NPN/PNP general-purpose double transistors

Characteristics

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity; unless otherwise speciﬁed

ICBO

collector-base cut-off current VCB =60V; IE = 0 A

100

VCB =60V; IE = 0 A; Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off current

VEB =7V; IC = 0 A

100

hFE

DC current gain

VCE =6V; IC = 1 mA

120

250

560

TR1 (PNP)

VCEsat

collector-emitter saturation

voltage

IC = −50 mA; IB = −5mA

−500

transition frequency

IE = −2 mA; VCE = −12 V; f = 100 MHz

190

MHz

collector capacitance

IE =ie = 0 A; VCB = −12 V; f = 1 MHz

2.3

TR2 (NPN)

VCEsat

collector-emitter saturation

voltage

IC = 50 mA; IB = 5 mA

250

transition frequency

IE = 2 mA; VCE = 12 V; f = 100 MHz

100

MHz

collector capacitance

IE =ie = 0 A; VCB =12V; f=1MHz

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