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IXI858S1T/R Fiches technique(PDF) 4 Page - IXYS Corporation |
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IXI858S1T/R Fiches technique(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS www.ixys.com 4 4/29/05 IXI858 / IXI859 Electrical Characteristics TA=25°C, VCC=13V unless otherwise specified Symbol Parameter Condition Min Typ Max Units Gate Output (GATE) VOL Output Low Voltage IGATE = 10mA 0.5 V VOH Output High Voltage IGATE = -10mA 11 V ISINK Output Sink Current VGATE = 6V 120 mA ISRC Output Source Current VGATE = 3V 60 mA VOL2 Output Low Voltage in UVLO state VCC = 6V, IGATE = 1mA 0.8 V tMINPW Minimum Output Pulse Width CGATE = 10pF 80 nS tPD IN to GATE propagation delay CGATE = 10pF 200 nS Under Voltage Lockout (VCC) UVLOH UVLO Top Threshold Voltage VCC Rising 14.1 V UVLOL UVLO Bottom Threshold Voltage VCC Falling 8.2 V VHYS UVLO Hysteresis 5.9 V Typical Application Circuit + - 5 6 7 8 1 2 4 VCC VOUT IN GATE GND VSUP VCAP 75k 13V Vclamp ChrgPReg Vreg UVLO µC 1uF 220nF 10uF HV DC IN HV DC OUT DC Supply IXI858 / IXI859 R1 L1 R2 C1 C2 |
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