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STP4N150 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STP4N150 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() 1/11 July 2005 STP4N150 STW4N150 N-CHANNEL 1500V - 5 Ω - 4A TO-220/TO-247 Very High Voltage PowerMESH™ MOSFET Table 1: General Features s TYPICAL RDS(on) = 5 Ω s AVALANCHE RUGGEDNESS s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s HIGH SPEED SWITCHING DESCRIPTION Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has de- signed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS RDS(on) ID Pw STP4N150 STW4N150 1500 V 1500 V < 7 Ω < 7 Ω 4 A 4 A 160 W 160 W TO-220 1 2 3 TO-247 1 2 3 SALES TYPE MARKING PACKAGE PACKAGING STP4N150 P4N150 TO-220 TUBE STW4N150 W4N150 TO-247 TUBE Rev. 3 |
Numéro de pièce similaire - STP4N150 |
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