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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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D371S45T Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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D371S45T Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 D371S45T Fast Recovery Diode FEATURES · Full diffusion process,flat type ceramic tube package · Double sides cooling,High current · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High power converters · AC/DC switching · Phase controlled rectifying ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VR Repetitive Peak Reverse Voltage 4500 V IF(AV) Average Forward Current TC=85℃;f=50Hz 330 A IFSM Surge Forward Current tp=10ms 6000 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.4 ℃ /W |
Numéro de pièce similaire - D371S45T |
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Description similaire - D371S45T |
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