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FMM 75-01F

IXYS reserves the right to change limits, test conditions and dimensions.

Preliminary data

IXYS reserves the right to change limits, test conditions and dimensions.

I

D25

= 75 A

V

DSS

= 100 V

R

Ω

Ω

Ω

Ω

Ω

Phaseleg Topology

Features

- low R

DSon

- low gate charge for high frequency

operation

- unclamped inductive switching (UIS)

capability

- dv/dt ruggedness

- fast intrinsic reverse diode

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

- UL registered E 72873

Applications

• drives and power supplies

• battery or fuel cell powered

• automotive, industrial vehicle etc.

• secondary side of mains power

supplies

MOSFET T1/T2

Symbol

Conditions

Maximum Ratings

V

DSS

T

100

V

V

GS

±20

V

I

D25

T

75

A

I

D90

T

50

A

I

F25

(body diode) T

100

A

I

F90

(body diode) T

60

A

dv/dt

V

≤ 300A;⎮di

⎮≤ 100A/µs; R

Ω

5

V/ns

T

E

AR

T

30

mJ

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

R

DSon

V

18

25 m

Ω

V

GSth

V

2

4

V

I

DSS

V

25°C

0.3 mA

T

0.25

mA

I

GSS

V

200

nA

Q

g

180

nC

Q

gs

35

nC

Q

gd

85

nC

t

d(on)

20

ns

t

r

60

ns

t

d(off)

80

ns

t

f

60

ns

V

F

(body diode) I

1.2

1.5

V

t

rr

(body diode) I

300

ns

R

thJC

0.5 K/W

R

thJH

with heat transfer paste

0.93

K/W

V

V

I

Ω

T1

T2

3

5

4

1

2

1

5