DSA60C150PB

V

=

V

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

0.93

R

0.85 K/W

R

min.

30

V

450

T

= 25°C

VJ

T

=

°C

VJ

mA

5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

150

P

tot

175

W

T

= 25°C

C

R

K/W

30

150

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

1.09

T

= 25°C

VJ

125

V

F0

V

0.55

T

=

°C

VJ

175

6

mΩ

V

0.80

T

=

°C

VJ

I =

A

F

V

30

0.98

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

150

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

289

junction capacitance

V =

V

12

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine;

T

= 45°C

VJ

max. forward surge current

V = 0 V

R

T

=

°C

VJ

175

390

A

150

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Schottky

150

0.50

IXYS reserves the right to change limits, conditions and dimensions.

20131031c

Data according to IEC 60747and per semiconductor unless otherwise specified

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