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FEP30FP Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FEP30FP Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultrafast Rectifier FEP30FP FEATURES · Guarding for over voltage protection · Dual rectifier construction,positive center-tap · Low forward voltage;high current capability · Low thermal resistance · Low power loss · Superfast recovery times for high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Power switching circuits · General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 210 300 V IF(AV) Average Rectified Forward Current 30 A IFSM Non-repetitive Peak Surge Current 300 A TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃ /W |
Numéro de pièce similaire - FEP30FP |
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Description similaire - FEP30FP |
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